Chapters authored
Electrical Properties of Epitaxial Ferroelectric Heterostructures
In the context of miniaturization of devices, ferroelectric materials are used as multifunctional materials for their well-known intrinsic properties, especially for the switching of polarization in an applied electric field. The high-quality epitaxial thin film structures are used for the possibility to study different effects as low dimensions, interface, strain and strain gradients on ferroelectric materials and other electric characteristics, also representing a possibility to obtain new phenomena and properties that can be used for development of new devices with different functionalities. This chapter is a summary of the ferroelectric and dielectric behaviour of epitaxial thin films of Pb(Zr,Ti)O3 (PZT) and BaTiO3 (BTO) obtained by pulsed laser deposition and the correlation with structural quality of the layers and with different electrostatic conditions induced either by electrodes or by the different interlayers. For this purpose in the first part, studies regarding the influence of the substrates and of different top electrodes are performed for Pb(Zr,Ti)O3 (PZT) 52/48. In the second part, we focused on artificial multiferroic structures from alternating layers of PZT 20/80 or BaTiO3 (BTO) as ferroelectric phase and CoFe2O4 (CFO) as magnetic material. We found that interface configuration and strain engineering could control ferroelectric hysteresis, the capacitance or the leakage current magnitude.
Part of the book: Epitaxy
Epitaxial Ferroelectric Thin Films: Potential for New Applications
This chapter provides an overview of the versatile applications and properties of epitaxial ferroelectric materials obtained using the pulsed laser deposition technique. These materials can play a significant role in various electronic and sensing applications or energy harvesting. Materials that are ferroelectric and have a perovskite structure (ABO3 type) show spontaneous polarization that can be changed by an electric field, temperature, mechanical stress, or light. Here, we present results obtained on epitaxial ferroelectric thin films with different compositions, lead-based or lead-free, and the correlation with structural quality of the layers and with different electrostatic conditions induced either by the substrate or by the different dopants. Our studies revealed that the utilization of pulsed laser beam deposition technique is suitable for obtaining ultrathin films depositions with thicknesses measuring less than 5 nm. These results allowed us to reveal the impacts caused by polarization orientation on the band structure or the presence of self-doping phenomena. We also found that the conduction type can be modified by introducing 1% Fe and Nb on PbZrTiO3 (PZT) epitaxial layers. In the last part of this chapter, we report on obtaining of a lead-free epitaxial thin film and its properties in the energy storage field.
Part of the book: Pulsed Laser Processing of Materials